HAT1096C-EL-E

Renesas

HAT1096C-EL-E

Analog & Power

HAT1096C - P-CHANNEL POWER MOSFE

Obsolete6-SMD, Flat LeadsAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs293mOhm @ 500µA, 4.5V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds155 pF @ 10 V
ManufacturerRenesas
Mounting TypeSurface Mount
Product StatusObsolete
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±12V
Vgs(th) (Max) @ Id1.4V @ 1mA

Electrical

Drain-to-Source Voltage20 V
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C1A (Ta)
Max Power Dissipation790mW (Ta)

Mechanical

PackageBulk
Package / Case6-SMD, Flat Leads
Supplier Device Package6-CMFPAK

Environmental

Operating Temperature150°C