General
| Memory Type | Non-Volatile |
|---|---|
| Technology | EEPROM |
| Access Time | 120 ns |
| Manufacturer | Renesas Electronics Corporation |
| Mounting Type | Through Hole |
| Product Status | Active |
| Write Cycle Time | 5ms |

Renesas Electronics Corporation
8K X 8 EEPROM,CMOS,HIGH SPEED,28
Structured electrical, mechanical and environmental parameters from imported product attributes.
| Memory Type | Non-Volatile |
|---|---|
| Technology | EEPROM |
| Access Time | 120 ns |
| Manufacturer | Renesas Electronics Corporation |
| Mounting Type | Through Hole |
| Product Status | Active |
| Write Cycle Time | 5ms |
| Memory Size | 64Kbit |
|---|---|
| Memory Format | EEPROM |
| Memory Interface | Parallel |
| Supply Voltage | 4.5V ~ 5.5V |
| Memory Organization | 8K x 8 |
| Package | Tube |
|---|---|
| Package / Case | 28-DIP (0.600", 15.24mm) |
| Supplier Device Package | 28-PDIP |
| Operating Temperature | 0°C ~ 70°C (TA) |
|---|