UPA622TT-E1-A

Renesas Electronics Corporation

UPA622TT-E1-A

Analog & Power

MOSFET N-CH 30V 3A 6WSOF

Obsolete6-SMD, Flat LeadsAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs82mOhm @ 1.5A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs3.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds155 pF @ 10 V
ManufacturerRenesas Electronics Corporation
Mounting TypeSurface Mount
Product StatusObsolete
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2.5V @ 1mA

Electrical

Drain-to-Source Voltage30 V
Current - Continuous Drain (Id) @ 25°C3A (Ta)
Max Power Dissipation200mW (Ta)

Mechanical

PackageBulk
Package / Case6-SMD, Flat Leads
Supplier Device Package6-WSOF

Environmental

Operating Temperature150°C (TJ)