UPA2803T1L-E2-AY

Renesas Electronics Corporation

UPA2803T1L-E2-AY

Analog & Power

MOSFET N-CH 20V 20A 8DFN

Obsolete8-VDFN Exposed PadAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs5.8mOhm @ 20A, 4.5V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs20 nC @ 4 V
Input Capacitance (Ciss) (Max) @ Vds2450 pF @ 10 V
ManufacturerRenesas Electronics Corporation
Mounting TypeSurface Mount
Product StatusObsolete
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id1.5V @ 1mA

Electrical

Drain-to-Source Voltage20 V
Current - Continuous Drain (Id) @ 25°C20A (Ta)

Mechanical

PackageBulk
Package / Case8-VDFN Exposed Pad
Supplier Device Package8-DFN3333 (3.3x3.3)