UPA2800T1L-E1-AY

Renesas Electronics Corporation

UPA2800T1L-E1-AY

Analog & Power

MOSFET N-CH 30V 17A 8DFN

Obsolete8-VDFN Exposed PadAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs7.3mOhm @ 17A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs17 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds1770 pF @ 15 V
ManufacturerRenesas Electronics Corporation
Mounting TypeSurface Mount
Product StatusObsolete
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2.5V @ 1mA

Electrical

Drain-to-Source Voltage30 V
Current - Continuous Drain (Id) @ 25°C17A (Ta)

Mechanical

PackageBulk
Package / Case8-VDFN Exposed Pad
Supplier Device Package8-DFN3333 (3.3x3.3)