UPA2690T1R-E2-AX

Renesas Electronics Corporation

UPA2690T1R-E2-AX

Datasheet

Analog & Power

MOSFET N/P-CH 20V 4A/3A 6HUSON

Active6-WFDFN Exposed PadAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs42mOhm @ 2A, 4.5V
Base Product NumberUPA2690
ConfigurationN and P-Channel Complementary
FET FeatureLogic Level Gate, 2.5V Drive
Gate Charge (Qg) (Max) @ Vgs4.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds330pF @ 10V
ManufacturerRenesas Electronics Corporation
Mounting TypeSurface Mount
Product StatusActive
TechnologyMOSFET (Metal Oxide)

Electrical

Drain-to-Source Voltage20V
Current - Continuous Drain (Id) @ 25°C4A, 3A
Power - Max2.3W

Mechanical

PackageTape & Reel (TR)
Package / Case6-WFDFN Exposed Pad
Supplier Device Package6-HUSON (2x2)

Environmental

Operating Temperature150°C (TJ)