UPA2680T1E-E2-AT

Renesas Electronics Corporation

UPA2680T1E-E2-AT

Analog & Power

MOSFET N-CH 20V 3A 6MLP

Obsolete6-VDFN Exposed PadAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs50mOhm @ 3A, 10V
FET FeatureSchottky Diode (Isolated)
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs3.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds190 pF @ 10 V
ManufacturerRenesas Electronics Corporation
Mounting TypeSurface Mount
Product StatusObsolete
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2V @ 250µA

Electrical

Drain-to-Source Voltage20 V
Current - Continuous Drain (Id) @ 25°C3A (Ta)

Mechanical

PackageBulk
Package / Case6-VDFN Exposed Pad
Supplier Device Package6-MLP (3x3)