UPA2670T1R-E2-AX

Renesas Electronics Corporation

UPA2670T1R-E2-AX

Datasheet

Analog & Power

MOSFET 2P-CH 20V 3A 6HUSON

Obsolete6-WFDFN Exposed PadAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs79mOhm @ 1.5A, 4.5V
Base Product NumberUPA2670
Configuration2 P-Channel (Dual)
FET FeatureLogic Level Gate, 1.8V Drive
Gate Charge (Qg) (Max) @ Vgs5.1nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds473pF @ 10V
ManufacturerRenesas Electronics Corporation
Mounting TypeSurface Mount
Product StatusObsolete
TechnologyMOSFET (Metal Oxide)

Electrical

Drain-to-Source Voltage20V
Current - Continuous Drain (Id) @ 25°C3A
Power - Max2.3W

Mechanical

PackageTape & Reel (TR)
Package / Case6-WFDFN Exposed Pad
Supplier Device Package6-HUSON (2x2)

Environmental

Operating Temperature150°C (TJ)