UPA2520T1H-T2-AT

Renesas Electronics Corporation

UPA2520T1H-T2-AT

Analog & Power

MOSFET N-CH 30V 10A 8VSOF

Obsolete8-SMD, Flat LeadAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs13.2mOhm @ 10A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs10.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds1100 pF @ 15 V
ManufacturerRenesas Electronics Corporation
Mounting TypeSurface Mount
Product StatusObsolete
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2.5V @ 1mA

Electrical

Drain-to-Source Voltage30 V
Current - Continuous Drain (Id) @ 25°C10A (Ta)
Max Power Dissipation1W (Ta)

Mechanical

PackageBulk
Package / Case8-SMD, Flat Lead
Supplier Device Package8-VSOF

Environmental

Operating Temperature150°C (TJ)