General
| Manufacturer | Renesas Electronics Corporation |
|---|---|
| Mounting Type | Through Hole |
| Packaging | Bulk |
| Part Status | Active |
| Transistor Type | 4 NPN Darlington (Quad) |
| Vce Saturation (Max) @ Ib, Ic | 1.5V @ 1.5mA, 1.5A |
Technical Specifications
Structured electrical, mechanical and environmental parameters from imported product attributes.
Electrical
| Voltage - Collector Emitter Breakdown (Max) | 100V |
|---|---|
| Current - Collector (Ic) (Max) | 3A |
| Current - Collector Cutoff (Max) | 1µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 2000 @ 1.5A, 2V |
| Power - Max | 3.5W |
Mechanical
| Package / Case | 10-SIP |
|---|---|
| Supplier Device Package | 10-SIP |
Environmental
| Operating Temperature | 150°C (TJ) |
|---|