General
| Diode Configuration | 1 Pair Common Cathode |
|---|---|
| Manufacturer | Renesas Electronics Corporation |
| Mounting Type | Through Hole |
| Product Status | Obsolete |
| Reverse Recovery Time (trr) | 15 ns |
| Technology | SiC (Silicon Carbide) Schottky |
Renesas Electronics Corporation
RJS6005WDPK-00#T0
DatasheetAnalog & Power
DIODE ARR SIC SCHOTT 600V TO3P
Technical Specifications
Structured electrical, mechanical and environmental parameters from imported product attributes.
Electrical
| Voltage - DC Reverse (Vr) (Max) | 600 V |
|---|---|
| Voltage - Forward (Vf) (Max) @ If | 1.8 V @ 15 A |
| Current - Average Rectified (Io) (per Diode) | 15A (DC) |
| Current - Reverse Leakage @ Vr | 10 µA @ 600 V |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
Mechanical
| Package | Tube |
|---|---|
| Package / Case | TO-220-3 Full Pack |
| Supplier Device Package | TO-3P |
Environmental
| Operating Temperature - Junction | -55°C ~ 155°C |
|---|