RJM0603JSC-00#12

Renesas Electronics Corporation

RJM0603JSC-00#12

Analog & Power

MOSFET 3N/3P-CH 60V 20A 20HSOP

Active20-SOIC (0.433", 11.00mm Width) Exposed PadAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs20mOhm @ 10A, 10V
Configuration3 N and 3 P-Channel (3-Phase Bridge)
FET FeatureLogic Level Gate, 4.5V Drive
Gate Charge (Qg) (Max) @ Vgs43nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds2600pF @ 10V
ManufacturerRenesas Electronics Corporation
Mounting TypeSurface Mount
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2.5V @ 1mA

Electrical

Drain-to-Source Voltage60V
Current - Continuous Drain (Id) @ 25°C20A
Power - Max54W

Mechanical

PackageTray
Package / Case20-SOIC (0.433", 11.00mm Width) Exposed Pad
Supplier Device Package20-HSOP

Environmental

GradeAutomotive
Operating Temperature175°C
QualificationAEC-Q101