Structured electrical, mechanical and environmental parameters from imported product attributes.
| Rds On (Max) @ Id, Vgs | 265mOhm @ 13.5A, 10V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 98 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3830 pF @ 25 V |
| Manufacturer | Renesas Electronics Corporation |
| Mounting Type | Through Hole |
| Product Status | Active |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±30V |
| Drain-to-Source Voltage | 600 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 27A (Ta) |
| Max Power Dissipation | 200W (Tc) |
| Package | Tube |
|---|---|
| Package / Case | TO-3P-3, SC-65-3 |
| Supplier Device Package | TO-3P |
| Operating Temperature | 150°C (TJ) |
|---|