Structured electrical, mechanical and environmental parameters from imported product attributes.
| Rds On (Max) @ Id, Vgs | 60mOhm @ 10A, 4V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 52 nC @ 4 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6720 pF @ 25 V |
| Manufacturer | Renesas Electronics Corporation |
| Mounting Type | Through Hole |
| Product Status | Obsolete |
| Technology | MOSFET (Metal Oxide) |
| Drain-to-Source Voltage | 150 V |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 20A (Ta) |
| Max Power Dissipation | 28.5W (Tc) |
| Package | Tube |
|---|---|
| Package / Case | TO-220-3 Full Pack |
| Supplier Device Package | TO-220FL |
| Operating Temperature | 150°C (TJ) |
|---|