Structured electrical, mechanical and environmental parameters from imported product attributes.
| Rds On (Max) @ Id, Vgs | 5.5mOhm @ 40A, 10V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 147 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 10000 pF @ 10 V |
| Manufacturer | Renesas Electronics Corporation |
| Mounting Type | Through Hole |
| Product Status | Obsolete |
| Technology | MOSFET (Metal Oxide) |
| Drain-to-Source Voltage | 100 V |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 80A (Ta) |
| Max Power Dissipation | 200W (Tc) |
| Package | Tube |
|---|---|
| Package / Case | TO-220-3 |
| Supplier Device Package | TO-220AB |
| Operating Temperature | 150°C (TJ) |
|---|