RJK0629DPE-00#J3

Renesas Electronics Corporation

RJK0629DPE-00#J3

Datasheet

Analog & Power

MOSFET N-CH 60V 85A 4LDPAK

ActiveSC-83Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs4.5mOhm @ 43A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds4100 pF @ 10 V
ManufacturerRenesas Electronics Corporation
Mounting TypeSurface Mount
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V

Electrical

Drain-to-Source Voltage60 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C85A (Ta)
Max Power Dissipation100W (Tc)

Mechanical

PackageTape & Reel (TR)
Package / CaseSC-83
Supplier Device PackageLDPAK

Environmental

Operating Temperature150°C (TJ)