RJK03P9DPA-00#J5A

Renesas Electronics Corporation

RJK03P9DPA-00#J5A

Analog & Power

MOSFET 2N-CH 30V 20A/50A 8WPAK

Obsolete8-WFDFN Exposed PadAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs7mOhm @ 10A, 10V
Base Product NumberRJK03P9
Configuration2 N-Channel (Half Bridge)
FET FeatureLogic Level Gate, 4.5V Drive
Gate Charge (Qg) (Max) @ Vgs7.7nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds1660pF @ 10V
ManufacturerRenesas Electronics Corporation
Mounting TypeSurface Mount
Product StatusObsolete
TechnologyMOSFET (Metal Oxide)

Electrical

Drain-to-Source Voltage30V
Current - Continuous Drain (Id) @ 25°C20A, 50A
Power - Max15W, 35W

Mechanical

PackageBulk
Package / Case8-WFDFN Exposed Pad
Supplier Device Package8-WPAK

Environmental

Operating Temperature150°C (TJ)