RJK0397DPA-00#J53

Renesas Electronics Corporation

RJK0397DPA-00#J53

Analog & Power

MOSFET N-CH 30V 30A 8WPAK

Obsolete8-PowerWDFNAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs10.1mOhm @ 15A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs7.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds1110 pF @ 10 V
ManufacturerRenesas Electronics Corporation
Mounting TypeSurface Mount
PackagingBulk
Part StatusObsolete
TechnologyMOSFET (Metal Oxide)

Electrical

Drain-to-Source Voltage30 V
Current - Continuous Drain (Id) @ 25°C30A (Ta)
Max Power Dissipation25W (Tc)

Mechanical

Package / Case8-PowerWDFN
Supplier Device Package8-WPAK