RJK0305DPB-02#J0

Renesas Electronics Corporation

RJK0305DPB-02#J0

Datasheet

Analog & Power

MOSFET N-CH 30V 30A LFPAK

ActiveSC-100, SOT-669Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs8mOhm @ 15A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds1250 pF @ 10 V
ManufacturerRenesas Electronics Corporation
Mounting TypeSurface Mount
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs (Max)+16V, -12V

Electrical

Drain-to-Source Voltage30 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C30A (Ta)

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / CaseSC-100, SOT-669
Supplier Device PackageLFPAK