NP89N06PDK-E1-AY

Renesas Electronics Corporation

NP89N06PDK-E1-AY

Datasheet

Analog & Power

P-TRS2 AUTOMOTIVE MOS

ActiveAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs5.3mOhm @ 45A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds6000 pF @ 25 V
ManufacturerRenesas Electronics Corporation
Mounting TypeSurface Mount
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id2.5V @ 250µA

Electrical

Drain-to-Source Voltage60 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C90A (Tc)
Max Power Dissipation1.8W (Ta), 147W (Tc)

Mechanical

PackageTray

Environmental

GradeAutomotive
Operating Temperature175°C
QualificationAEC-Q101