NP80N04MLG-S18-AY

Renesas Electronics Corporation

NP80N04MLG-S18-AY

Analog & Power

MOSFET N-CH 40V 80A TO220

ObsoleteTO-220-3Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs4.8mOhm @ 40A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs135 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds6900 pF @ 25 V
ManufacturerRenesas Electronics Corporation
Mounting TypeThrough Hole
PackagingTube
Part StatusObsolete
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2.5V @ 250µA

Electrical

Drain-to-Source Voltage40 V
Current - Continuous Drain (Id) @ 25°C80A (Tc)
Max Power Dissipation1.8W (Ta), 115W (Tc)

Mechanical

Package / CaseTO-220-3
Supplier Device PackageTO-220

Environmental

Operating Temperature175°C (TJ)