NP60N06PDK-E1-AY

Renesas Electronics Corporation

NP60N06PDK-E1-AY

Datasheet

Analog & Power

MOSFET TRANSISTOR MORE 1 W

ActiveAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs12mOhm @ 30A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds3600 pF @ 25 V
ManufacturerRenesas Electronics Corporation
Mounting TypeSurface Mount
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id2.5V @ 250µA

Electrical

Drain-to-Source Voltage60 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C60A
Max Power Dissipation105W

Mechanical

PackageTape & Reel (TR)

Environmental

GradeAutomotive
Operating Temperature150°C (TJ)
QualificationAEC-Q101