NP35N04YUG-E1-AY

Renesas Electronics Corporation

NP35N04YUG-E1-AY

Datasheet

Analog & Power

MOSFET N-CH 40V 35A 8HSON

Active8-SMD, Flat Lead Exposed PadAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs10mOhm @ 17.5A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds2850 pF @ 25 V
ManufacturerRenesas Electronics Corporation
Mounting TypeSurface Mount
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id4V @ 250µA

Electrical

Drain-to-Source Voltage40 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C35A (Tc)
Max Power Dissipation1W (Ta), 77W (Tc)

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / Case8-SMD, Flat Lead Exposed Pad
Supplier Device Package8-HSON

Environmental

Operating Temperature175°C (TJ)