NP33N06YDG-E1-AY

Renesas Electronics Corporation

NP33N06YDG-E1-AY

Datasheet

Analog & Power

MOSFET N-CH 60V 33A 8HSON

Active8-SMD, Flat Lead Exposed PadAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs14mOhm @ 16.5A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds3900 pF @ 25 V
ManufacturerRenesas Electronics Corporation
Mounting TypeSurface Mount
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id2.5V @ 250µA

Electrical

Drain-to-Source Voltage60 V
Drive Voltage (Max Rds On, Min Rds On)5V, 10V
Current - Continuous Drain (Id) @ 25°C33A (Tc)
Max Power Dissipation1W (Ta), 97W (Tc)

Mechanical

PackageTape & Reel (TR)
Package / Case8-SMD, Flat Lead Exposed Pad
Supplier Device Package8-HSON

Environmental

Operating Temperature175°C (TJ)