NP30N06QDK-E1-AY

Renesas Electronics Corporation

NP30N06QDK-E1-AY

Datasheet

Analog & Power

MOSFET 2N-CH 60V 30A 8HSON

Active8-PowerLDFNAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs14mOhm @ 15A, 10V
Configuration2 N-Channel (Dual)
Gate Charge (Qg) (Max) @ Vgs38nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds2250pF @ 25V
ManufacturerRenesas Electronics Corporation
Mounting TypeSurface Mount
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2.5V @ 250µA

Electrical

Drain-to-Source Voltage60V
Current - Continuous Drain (Id) @ 25°C30A (Tc)
Power - Max1W (Ta), 59W (Tc)

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / Case8-PowerLDFN
Supplier Device Package8-HSON (5x5.4)

Environmental

GradeAutomotive
Operating Temperature175°C
QualificationAEC-Q101