NP29N04QUK-E1-AY

Renesas Electronics Corporation

NP29N04QUK-E1-AY

Datasheet

Analog & Power

MOSFET 2N-CH 40V 30A 8HSON

Active8-PowerLDFNAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs10.1mOhm @ 15A, 10V
Configuration2 N-Channel (Dual)
Gate Charge (Qg) (Max) @ Vgs29nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds1500pF @ 25V
ManufacturerRenesas Electronics Corporation
Mounting TypeSurface Mount
PackagingTape & Reel (TR) Cut Tape (CT)
Part StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id4V @ 250µA

Electrical

Drain-to-Source Voltage40V
Current - Continuous Drain (Id) @ 25°C30A (Tc)
Power - Max1W (Ta), 44W (Tc)

Mechanical

Package / Case8-PowerLDFN
Supplier Device Package8-HSON (5x5.4)

Environmental

GradeAutomotive
Operating Temperature175°C
QualificationAEC-Q101