NP15P06SLG-E1-AY

Renesas Electronics Corporation

NP15P06SLG-E1-AY

Datasheet

Analog & Power

MOSFET P-CH 60V 15A TO252

ActiveTO-252-3, DPak (2 Leads + Tab), SC-63Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs70mOhm @ 7.5A, 10V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1100 pF @ 10 V
ManufacturerRenesas Electronics Corporation
Mounting TypeSurface Mount
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id2.5V @ 250µA

Electrical

Drain-to-Source Voltage60 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C15A (Ta)
Max Power Dissipation1.2W (Ta), 30W (Tc)

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device PackageTO-252 (MP-3ZK)

Environmental

Operating Temperature175°C (TJ)