HIP2210FRTZ

Renesas Electronics Corporation

HIP2210FRTZ

Datasheet

Analog & Power

100V/4A PWM INPUT HALF BRIDGE DR

Active10-WDFN Exposed PadAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Channel TypeSynchronous
Driven ConfigurationHalf-Bridge
Gate TypeN-Channel MOSFET
Input TypeNon-Inverting
ManufacturerRenesas Electronics Corporation
Mounting TypeSurface Mount
Number of Drivers2
Product StatusActive
Rise / Fall Time (Typ)20ns, 20ns

Electrical

Current - Peak Output (Source, Sink)3A, 4A
High Side Voltage - Max (Bootstrap)115 V
Logic Voltage - VIL, VIH1.47V, 1.84V
Supply Voltage6V ~ 18V

Mechanical

PackageTube
Package / Case10-WDFN Exposed Pad
Supplier Device Package10-TDFN (4x4)

Environmental

Operating Temperature-40°C ~ 125°C (TJ)