HIP2101EIBZ

Renesas Electronics Corporation

HIP2101EIBZ

Datasheet

Analog & Power

IC GATE DRVR HALF-BRIDGE 8SOIC

Active8-SOIC (0.154", 3.90mm Width) Exposed PadAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Base Product NumberHIP2101
Channel TypeIndependent
Driven ConfigurationHalf-Bridge
Gate TypeN-Channel MOSFET
Input TypeNon-Inverting
ManufacturerRenesas Electronics Corporation
Mounting TypeSurface Mount
Number of Drivers2
Product StatusActive
Rise / Fall Time (Typ)10ns, 10ns

Electrical

Current - Peak Output (Source, Sink)2A, 2A
High Side Voltage - Max (Bootstrap)114 V
Logic Voltage - VIL, VIH0.8V, 2.2V
Supply Voltage9V ~ 14V

Mechanical

PackageTube
Package / Case8-SOIC (0.154", 3.90mm Width) Exposed Pad
Supplier Device Package8-SOIC-EP

Environmental

Operating Temperature-55°C ~ 150°C (TJ)