HAT2279H-EL-E

Renesas Electronics Corporation

HAT2279H-EL-E

Datasheet

Analog & Power

MOSFET N-CH 80V 30A LFPAK

ActiveSC-100, SOT-669Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs12mOhm @ 15A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds3520 pF @ 10 V
ManufacturerRenesas Electronics Corporation
Mounting TypeSurface Mount
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V

Electrical

Drain-to-Source Voltage80 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C30A (Ta)
Max Power Dissipation25W (Tc)

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / CaseSC-100, SOT-669
Supplier Device PackageLFPAK

Environmental

Operating Temperature150°C (TJ)