HAT2218R-EL-E

Renesas Electronics Corporation

HAT2218R-EL-E

Analog & Power

MOSFET 2N-CH 30V 7.5A/8A 8SOP

Obsolete8-SOIC (0.154", 3.90mm Width)Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs24mOhm @ 3.75A, 10V
Base Product NumberHAT2218
Configuration2 N-Channel (Dual) Asymmetrical
FET FeatureLogic Level Gate, 4.5V Drive
Gate Charge (Qg) (Max) @ Vgs4.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds630pF @ 10V
ManufacturerRenesas Electronics Corporation
Mounting TypeSurface Mount
Product StatusObsolete
TechnologyMOSFET (Metal Oxide)

Electrical

Drain-to-Source Voltage30V
Current - Continuous Drain (Id) @ 25°C7.5A, 8A
Power - Max1.5W

Mechanical

PackageBulk
Package / Case8-SOIC (0.154", 3.90mm Width)
Supplier Device Package8-SOP

Environmental

Operating Temperature150°C (TJ)