HAT2168HWS-E

Renesas Electronics Corporation

HAT2168HWS-E

Analog & Power

MOSFET N-CH 30V 30A 5LFPAK

ObsoleteSC-100, SOT-669Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs7.9mOhm @ 15A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs11 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds1730 pF @ 10 V
ManufacturerRenesas Electronics Corporation
Mounting TypeSurface Mount
Product StatusObsolete
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id2.5V @ 1mA

Electrical

Drain-to-Source Voltage30 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C30A (Ta)
Max Power Dissipation15W (Tc)

Mechanical

PackageTape & Reel (TR)
Package / CaseSC-100, SOT-669
Supplier Device PackageLFPAK

Environmental

Operating Temperature150°C