HAT1126RWS-E

Renesas Electronics Corporation

HAT1126RWS-E

Analog & Power

MOSFET 2P-CH 60V 6A 8SOP

Obsolete8-SOIC (0.154", 3.90mm Width)Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs50mOhm @ 3A, 10V
Base Product NumberHAT1126
Configuration2 P-Channel (Dual)
FET FeatureLogic Level Gate, 4.5V Drive
Gate Charge (Qg) (Max) @ Vgs37nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds2300pF @ 10V
ManufacturerRenesas Electronics Corporation
Mounting TypeSurface Mount
Product StatusObsolete
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2.5V @ 1mA

Electrical

Drain-to-Source Voltage60V
Current - Continuous Drain (Id) @ 25°C6A (Ta)
Power - Max3W (Ta)

Mechanical

PackageTape & Reel (TR)
Package / Case8-SOIC (0.154", 3.90mm Width)
Supplier Device Package8-SOP

Environmental

Operating Temperature150°C