Structured electrical, mechanical and environmental parameters from imported product attributes.
| Rds On (Max) @ Id, Vgs | 65mOhm @ 3A, 4.5V |
|---|---|
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 11 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 750 pF @ 10 V |
| Manufacturer | Renesas Electronics Corporation |
| Mounting Type | Surface Mount |
| Packaging | Bulk |
| Part Status | Active |
| Technology | MOSFET (Metal Oxide) |
| Drain-to-Source Voltage | 20 V |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 4.4A (Ta) |
| Max Power Dissipation | 1.05W (Ta) |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
|---|---|
| Supplier Device Package | 6-TSOP |
| Operating Temperature | 150°C (TJ) |
|---|