H5N2522LSTL-E

Renesas Electronics Corporation

H5N2522LSTL-E

Datasheet

Analog & Power

MOSFET N-CH 250V 20A 4LDPAK

ActiveSC-83Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs180mOhm @ 10A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1300 pF @ 25 V
ManufacturerRenesas Electronics Corporation
Mounting TypeSurface Mount
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±30V

Electrical

Drain-to-Source Voltage250 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C20A (Ta)
Max Power Dissipation75W (Tc)

Mechanical

PackageTape & Reel (TR)
Package / CaseSC-83
Supplier Device PackageLDPAK

Environmental

Operating Temperature150°C (TJ)