Structured electrical, mechanical and environmental parameters from imported product attributes.
| Rds On (Max) @ Id, Vgs | 5.7Ohm @ 200mA, 4V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 3.7 nC @ 4 V |
| Input Capacitance (Ciss) (Max) @ Vds | 80 pF @ 25 V |
| Manufacturer | Renesas Electronics Corporation |
| Mounting Type | Through Hole |
| Product Status | Obsolete |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±10V |
| Drain-to-Source Voltage | 250 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4V |
| Current - Continuous Drain (Id) @ 25°C | 400mA (Ta) |
| Max Power Dissipation | 750mW (Ta) |
| Package | Tape & Reel (TR) |
|---|---|
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| Supplier Device Package | TO-92 |
| Operating Temperature | 150°C (TJ) |
|---|