Structured electrical, mechanical and environmental parameters from imported product attributes.
| Rds On (Max) @ Id, Vgs | 9mOhm @ 24A, 10V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 32 nC @ 12 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1670 pF @ 10 V |
| Manufacturer | Renesas Electronics Corporation |
| Mounting Type | Surface Mount |
| Product Status | Obsolete |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Drain-to-Source Voltage | 30 V |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 48A (Tc) |
| Max Power Dissipation | 1W (Ta), 29W (Tc) |
| Package | Bulk |
|---|---|
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Supplier Device Package | TO-252 (MP-3Z) |
| Operating Temperature | 150°C (TJ) |
|---|