2SK3659-AZ

Renesas Electronics Corporation

2SK3659-AZ

Analog & Power

MOSFET N-CH 20V 65A TO220-3

ObsoleteTO-220-3 Isolated TabAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs5.7mOhm @ 40A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1700 pF @ 10 V
ManufacturerRenesas Electronics Corporation
Mounting TypeThrough Hole
Product StatusObsolete
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2.5V @ 1mA

Electrical

Drain-to-Source Voltage20 V
Current - Continuous Drain (Id) @ 25°C65A (Tc)

Mechanical

PackageBulk
Package / CaseTO-220-3 Isolated Tab
Supplier Device PackageTO-220-3