2SJ687-ZK-E1-AY

Renesas Electronics Corporation

2SJ687-ZK-E1-AY

Datasheet

Analog & Power

MOSFET P-CH 20V 20A TO252

ActiveTO-252-3, DPak (2 Leads + Tab), SC-63Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs7mOhm @ 10A, 4.5V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs57 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds4400 pF @ 10 V
ManufacturerRenesas Electronics Corporation
Mounting TypeSurface Mount
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±12V

Electrical

Drain-to-Source Voltage20 V
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C20A (Tc)
Max Power Dissipation1W (Ta), 36W (Tc)

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device PackageTO-252 (MP-3ZK)

Environmental

Operating Temperature150°C (TJ)