General
| FET Type | P-Channel |
|---|---|
| Input Capacitance (Ciss) (Max) @ Vds | 900 pF @ 10 V |
| Manufacturer | Renesas Electronics Corporation |
| Mounting Type | Through Hole |
| Product Status | Obsolete |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±15V |
Technical Specifications
Structured electrical, mechanical and environmental parameters from imported product attributes.
Electrical
| Drain-to-Source Voltage | 160 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 7A (Ta) |
| Max Power Dissipation | 100W (Tc) |
Mechanical
| Package | Tube |
|---|---|
| Package / Case | TO-220-3 Full Pack |
| Supplier Device Package | TO-3P |
Environmental
| Operating Temperature | 150°C (TJ) |
|---|