General
| Manufacturer | Renesas Electronics Corporation |
|---|---|
| Mounting Type | Through Hole |
| Packaging | Bulk |
| Part Status | Active |
| Transistor Type | NPN - Darlington |
| Vce Saturation (Max) @ Ib, Ic | 1.2V @ 1mA, 1A |
Technical Specifications
Structured electrical, mechanical and environmental parameters from imported product attributes.
Electrical
| Voltage - Collector Emitter Breakdown (Max) | 35 V |
|---|---|
| Current - Collector (Ic) (Max) | 2 A |
| Current - Collector Cutoff (Max) | 10µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 2000 @ 1A, 2V |
| Power - Max | 1.3 W |
Mechanical
| Package / Case | TO-225AA, TO-126-3 |
|---|---|
| Supplier Device Package | TO-126 |
Environmental
| Operating Temperature | 150°C (TJ) |
|---|