General
| Manufacturer | Renesas Electronics Corporation |
|---|---|
| Mounting Type | Surface Mount |
| Noise Figure (dB Typ @ f) | 1.8dB @ 2GHz |
| Product Status | Obsolete |
| Transistor Type | NPN |
Technical Specifications
Structured electrical, mechanical and environmental parameters from imported product attributes.
Electrical
| Voltage - Collector Emitter Breakdown (Max) | 10V |
|---|---|
| Current - Collector (Ic) (Max) | 35mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 10mA, 6V |
| Power - Max | 200mW |
| Frequency - Transition | 10GHz |
| Gain | 9dB |
Mechanical
| Package | Bulk |
|---|---|
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Supplier Device Package | SOT23-3 (TO-236) |
Environmental
| Operating Temperature | 150°C (TJ) |
|---|