General
| Manufacturer | Renesas Electronics Corporation |
|---|---|
| Mounting Type | Through Hole |
| Packaging | Bulk |
| Part Status | Active |
| Transistor Type | PNP |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 300mA, 3A |
Technical Specifications
Structured electrical, mechanical and environmental parameters from imported product attributes.
Electrical
| Voltage - Collector Emitter Breakdown (Max) | 25 V |
|---|---|
| Current - Collector (Ic) (Max) | 3 A |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 135 @ 1A, 2V |
| Power - Max | 1 W |
| Frequency - Transition | 280MHz |
Mechanical
| Package / Case | 3-SSIP |
|---|
Environmental
| Operating Temperature | 150°C (TJ) |
|---|