Structured electrical, mechanical and environmental parameters from imported product attributes.
| Rds On (Max) @ Id, Vgs | 50mOhm @ 2.5A, 4.5V |
|---|---|
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 5.6 nC @ 4 V |
| Input Capacitance (Ciss) (Max) @ Vds | 810 pF @ 10 V |
| Manufacturer | Renesas Electronics America Inc |
| Mounting Type | Surface Mount |
| Product Status | Obsolete |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±10V |
| Vgs(th) (Max) @ Id | 1.5V @ 1mA |
| Drain-to-Source Voltage | 12 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Current - Continuous Drain (Id) @ 25°C | 4.5A (Ta) |
| Max Power Dissipation | 200mW (Ta) |
| Package | Tape & Reel (TR) |
|---|---|
| Package / Case | SC-95 |
| Supplier Device Package | SC-95 |
| Operating Temperature | 150°C |
|---|