RQJ0305EQDQS#H1

Renesas Electronics America Inc

RQJ0305EQDQS#H1

Analog & Power

MOSFET P-CH 30V 3.4A UPAK

ObsoleteTO-243AAAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs140mOhm @ 1.7A, 4.5V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds330 pF @ 10 V
ManufacturerRenesas Electronics America Inc
Mounting TypeSurface Mount
Product StatusObsolete
TechnologyMOSFET (Metal Oxide)
Vgs (Max)+8V, -12V
Vgs(th) (Max) @ Id1.4V @ 1mA

Electrical

Drain-to-Source Voltage30 V
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C3.4A (Ta)
Max Power Dissipation1.5W (Ta)

Mechanical

PackageTape & Reel (TR)
Package / CaseTO-243AA
Supplier Device PackageUPAK

Environmental

Operating Temperature150°C