Structured electrical, mechanical and environmental parameters from imported product attributes.
| Rds On (Max) @ Id, Vgs | 1.1Ohm @ 5A, 10V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 28 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1050 pF @ 25 V |
| Manufacturer | Renesas Electronics America Inc |
| Mounting Type | Surface Mount |
| Product Status | Active |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±30V |
| Drain-to-Source Voltage | 600 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 10A (Ta) |
| Max Power Dissipation | 100W (Tc) |
| Package | Tube |
|---|---|
| Package / Case | SC-83 |
| Supplier Device Package | LDPAK |
| Operating Temperature | 150°C(TJ) |
|---|