RJK60S5DPK-M0#T0

Renesas Electronics America Inc

RJK60S5DPK-M0#T0

Analog & Power

MOSFET N-CH 600V 20A TO3PSG

ObsoleteTO-3P-3, SC-65-3Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs178mOhm @ 10A, 10V
FET FeatureSuper Junction
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1600 pF @ 25 V
ManufacturerRenesas Electronics America Inc
Mounting TypeThrough Hole
Product StatusObsolete
TechnologyMOSFET (Metal Oxide)

Electrical

Drain-to-Source Voltage600 V
Current - Continuous Drain (Id) @ 25°C20A (Tc)

Mechanical

PackageTube
Package / CaseTO-3P-3, SC-65-3
Supplier Device PackageTO-3PSG