RJK60S5DPE-00#J3

Renesas Electronics America Inc

RJK60S5DPE-00#J3

Analog & Power

MOSFET N-CH 600V 20A 4LDPAK

ObsoleteSC-83Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs178mOhm @ 10A, 10V
FET FeatureSuper Junction
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1600 pF @ 25 V
ManufacturerRenesas Electronics America Inc
Mounting TypeSurface Mount
Product StatusObsolete
TechnologyMOSFET (Metal Oxide)

Electrical

Drain-to-Source Voltage600 V
Current - Continuous Drain (Id) @ 25°C20A (Tc)
Max Power Dissipation125W (Tc)

Mechanical

PackageBulk
Package / CaseSC-83
Supplier Device PackageLDPAK

Environmental

Operating Temperature150°C(TJ)