RJK6025DPD-00#J2

Renesas Electronics America Inc

RJK6025DPD-00#J2

Datasheet

Analog & Power

MOSFET N-CH 600V 1A MP3A

ActiveTO-252-3, DPak (2 Leads + Tab), SC-63Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs17.5Ohm @ 500mA, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds37.5 pF @ 25 V
ManufacturerRenesas Electronics America Inc
Mounting TypeSurface Mount
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±30V
Vgs(th) (Max) @ Id5V @ 1mA

Electrical

Drain-to-Source Voltage600 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C1A (Ta)
Max Power Dissipation29.7W (Tc)

Mechanical

PackageTape & Reel (TR)
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device PackageMP-3A

Environmental

Operating Temperature150°C(TJ)