Structured electrical, mechanical and environmental parameters from imported product attributes.
| Rds On (Max) @ Id, Vgs | 9.2mOhm @ 8A, 10V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 7.1 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1190 pF @ 10 V |
| Manufacturer | Renesas Electronics America Inc |
| Mounting Type | Surface Mount |
| Product Status | Obsolete |
| Technology | MOSFET (Metal Oxide) |
| Drain-to-Source Voltage | 30 V |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 16A (Ta) |
| Max Power Dissipation | 12.5W (Tc) |
| Package | Bulk |
|---|---|
| Package / Case | 8-PowerWDFN |
| Supplier Device Package | 8-HWSON (3.3x3.3) |
| Operating Temperature | 150°C(TJ) |
|---|